Invia messaggio
Casa. > prodotti > Modulo di alimentazione IGBT > APT65GP60B2G IGBT Power Module Transistors IGBTs Single

APT65GP60B2G IGBT Power Module Transistors IGBTs Single

Categoria:
Modulo di alimentazione IGBT
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
APT65GP60B2G
Produttore:
Microsemi Corporation
Descrizione:
IGBT 600V 100A 833W TMAX
Categoria:
Transistor - IGBTs - singoli
Famiglia:
Transistor - IGBTs - singoli
Serie:
MOS 7® DI POTERE
Introduzione

APT65GP60B2G Specifications

Part Status Not For New Designs
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 250A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Power - Max 833W
Switching Energy 605µJ (on), 896µJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) @ 25°C 30ns/91ns
Test Condition 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT65GP60B2G Packaging

Detection

APT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs Single

Invii il RFQ
Stoccaggio:
MOQ:
Negotiable