SIR644DP-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Categoria:
Transistor ad effetto di campo
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
SIR644DP-T1-GE3
Produttore:
Vishay Siliconix
Descrizione:
MOSFET N-CH 40V 60A PPAK SO-8
Categoria:
Transistor - FETs, MOSFETs - singoli
Famiglia:
Transistor - FETs, MOSFETs - singoli
Serie:
TrenchFET®
Introduzione
SIR644DP-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 20V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SIR644DP-T1-GE3 Packaging
Detection
Invii il RFQ
Stoccaggio:
MOQ:
Negotiable